MOS and nanostructure device modeling, UHVCVD for Si-Ge-C heterostructure devices, Ultra-shallow junction technology and process modeling
Dr. Banerjee is active in the areas of ultra high vacuum and remote plasma-enhanced chemical vapor deposition for silicon-germanium-carbon heterostructure MOSFETs and nanostructures. He is also interested in the areas of ultra-shallow junction technology and semiconductor device modeling